Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs-Reference-Cited by-同舟云学术

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Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs

Published:2004 Issue:9 Volume:7 Page:G185
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Lim Jung Wook,Yun Sun Jin,Kim Yong Hae,Sohn Choong Yong,Lee Jin Ho

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference15 articles.

1. Silicon for thin-film transistors

2. J. Jang, in Proceedings of the 10th International Display Workshops 2003 , p. 299 (2003).

3. Thin film transistors for displays on plastic substrates

4. Characteristics of polysilicon thin-film transistor with thin-gate dielectric grown by electron cyclotron resonance nitrous oxide plasma

5. Novel gate dielectric films formed by ion plating for low-temperature-processed polysilicon TFTs

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