Quantum Mechanical Electrostatics and Transport Simulation and Performance Evaluation of Short Channel Monolayer WSe2 Field Effect Transistor

Abstract

In this work a numerical electrostatics and transport simulator is developed for monolayer WSe2 channel Field Effect Transistor considering Quantum Mechanical effects. The electrostatics simulator solves 1-D Schrödinger-Poisson equation self-consistently in the direction perpendicular to the channel. Whereas, the transport simulator employs Fast Uncoupled Mode Space (FUMS) approach with Non-Equlibrium Green’s Function (NEGF) formalism. The simulator explored 20 nm long monolayer WSe2 channel FET with top and bottom oxide thickness 3 and 5 nm respectively. This device showed excellent ON state performance with maximum ON current reaching up to 467.2 A/m and maximum transconductance of 887.7 S/m. On the other hand, the OFF state and short channel performances also showed promise with 1010 on/off current ratio, 77.72 mV/dec Subthreshold Slope (SS) and 14.91 mV/V Drain Induced Barrier Lowering (DIBL). The overall performance reveals great potential of this monolayer WSe2 FET in many low power and high speed applications.