Permittivity Enhancement of Mechanically Strained SrTiO3 MIM Capacitor

Abstract

The possibility of strain engineering on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased dielectric constant, and as a frequency became higher, the increment of dielectric constant increased. The mechanism of the tensile strain-induced capacitance increase was also discussed. The tensile strain reduced a damping of titan-oxygen oscillator in SrTiO3 film, and titan-oxygen dipole moment was increased.