Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors-Reference-Cited by-同舟云学术

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Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors

Published:2013-03-13 Issue:6 Volume:2 Page:Q39-Q42
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Douglas E. A.,Zeenberg D.,Maeda M.,Gila B. P.,Abernathy C. R.,Pearton S. J.,Ren F.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence of polarization-induced energy states at AlGaN/GaN interface;Journal of Physics D: Applied Physics;2024-08-27

2. Spatially-resolved cathodoluminescence spectroscopy of ZnO defects;Materials Science in Semiconductor Processing;2017-01

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