Unexpectedly High Etching Rate of Highly Doped n-Type Crystalline Silicon in Hydrofluoric Acid

Author:

Liu L.,Lin F.,Heinrich M.,Aberle A. G.,Hoex B.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 1530-nm electroluminescence from p-Ga2S3:Er/n+-Si heterojunctions induced by Zener tunneling;Applied Physics Letters;2023-12-18

2. Vapor etching to avoid micro-masking by gas-bubbles in wet release of MEMS;Journal of Micromechanics and Microengineering;2023-05-16

3. Extraction and analysis of TCO coated glass from waste amorphous silicon thin film solar module;Solar Energy Materials and Solar Cells;2023-05

4. Effect of hydrofluoric acid treatment of doped layers in silicon heterojunction solar cells on their performance;SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics;2022

5. Wet Etching and Cleaning;Silicon Sensors and Actuators;2022

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