Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon Wafers

Abstract

The establishment of an evaluation criterion for efficient gettering of transition metals is a very important and difficult issue in the field of defect engineering on silicon wafers. In this work we present results of an investigation of the getter efficiency for Cu and Ni on Czochralski silicon wafers containing various concentrations of oxygen and vacancies. We compare the results with other works on criteria for efficient gettering and analyze their strengths and weaknesses.