Charge Transport in Uniform Metal-Assisted Chemical Etching for 3D High-Aspect-Ratio Micro- and Nanofabrication on Silicon-Reference-Cited by-同舟云学术

Charge Transport in Uniform Metal-Assisted Chemical Etching for 3D High-Aspect-Ratio Micro- and Nanofabrication on Silicon

Published:2015 Issue:9 Volume:4 Page:P337-P346
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Li Liyi,Zhao Xueying,Wong Ching-Ping

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference39 articles.

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3. Etching submicrometer trenches by using the Bosch process and its application to the fabrication of antireflection structures

4. The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

5. Metal-assisted chemical etching in HF/H2O2 produces porous silicon

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