Competitive Interaction between Segregation Gettering and Surface Precipitation of Nickel inp/p+Silicon Epitaxial Wafers

Author:

Torigoe Kazuhisa,Ono Toshiaki,Nakamura Kozo

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Behavior of Defects Induced by Metallic Impurities on Si(100) Surfaces

2. Internal Gettering for Ni Contamination in Czochralski Silicon Wafers

3. Hoelzl R. Blietz M. Fabry L. Schmoke R. , in Semiconductor Silicon 2002, Huff H. R. Fabry L. Kishino S. , Editors, PV 2002-2, p. 608, The Electrochemical Series, Pennington, NJ (2002).

4. Seacrist M. Stinson M. Libbert J. Standley R. Binns J. , in Semiconductor Silicon 2002, Huff H. R. Fabry L. Kishino S. , Editors, PV 2002-2, p. 638, The Electrochemical Series, Pennington, NJ (2002).

5. Modeling of Internal Gettering of Nickel and Copper by Oxide Precipitates in Czochralski-Si Wafers

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Gettering Mechanism of Copper in n‐Type Silicon Wafers;physica status solidi (a);2019-07-05

2. Gettering and Passivation of Metals in Silicon and Germanium;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

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