(Invited) Hot Carrier Reliability of High Voltage HVMOSFETs in BCD (Bipolar-CMOS-DMOS) Technology
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The Electrochemical Society
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization and Experimental Validation of Self Heating in RF LDMOS Transistor using BSIM-BULK Model;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
2. Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology;IEEE Electron Device Letters;2023-05
3. Impact of hot carrier on RF N-LDMOS reliability for radar application after pulsed life test;2021 IEEE 2nd International Conference on Signal, Control and Communication (SCC);2021-12-20
4. RF performance reliability of power N‐LDMOS under pulsed‐RF aging life test in radar application S‐band;IET Circuits, Devices & Systems;2020-08-31
5. Study of reliability degradation in power RF LDMOS under pulsed life test due to impact ionization;2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2020-07-20
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