Oxygen Precipitation Behavior in 300 mm Polished Czorchralski Silicon Wafers-Reference-Cited by-同舟云学术

Oxygen Precipitation Behavior in 300 mm Polished Czorchralski Silicon Wafers

Published:1999-10-01 Issue:10 Volume:146 Page:3807-3811
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Ono T.¹²,Rozgonyi G. A.¹,Au C.³,Messina T.³,Goodall R. K.³,Huff H. R.⁴

Affiliation:

1. Burlington Labs, Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916, United States of America

2. Sumitomo Metal Industries, Limited, Research and Development Center, Sitix Division, Saga 849-0597, Japan

3. International Sematech Incorporated, Austin, Texas 78741‐6499, United States of America

4. Sematech Incorporated, Austin, Texas 78741-6499, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1392555/pdf

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