Anomalous Diffusion of Tin in GaAs-Reference-Cited by-同舟云学术

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Anomalous Diffusion of Tin in GaAs

Published:1985-09-01 Issue:9 Volume:132 Page:2214-2218
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Erkaya H. H.¹²³⁴,Roedel R. J.¹²³⁴,Lareau R.¹²³⁴,Williams P.¹²³⁴,Leavitt J.¹²³⁴,Von Neida A.¹²³⁴

Affiliation:

1. Department of Electrical and Computer Engineering, Arizona State University, Tempe, Arizona 85287

2. Department of Chemistry, Arizona State University, Tempe, Arizona 85287

3. Department of Physics, University of Arizona, Tucson, Arizona 87520

4. AT&T Bell Laboratories, Murray Hill, New Jersey 07794

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2114321/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ChemInform Abstract: Anomalous Diffusion of Tin in GaAs.;Chemischer Informationsdienst;1986-01-07

2. Transmission electron microscopy cathodoluminescence investigation of anomalous Sn diffusion in GaAs;Journal of Applied Physics;1986-01

3. Ultra-Thin p+ Layers in GaAs;MRS Proceedings;1986

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