(Invited) Heterogeneous Integration of III-V Semiconductors on Si Photonics Platform-Reference-Cited by-同舟云学术

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(Invited) Heterogeneous Integration of III-V Semiconductors on Si Photonics Platform

Published:2018-07-20 Issue:7 Volume:86 Page:11-16
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Hiraki Tatsurou,Aihara Takuma,Hasebe Koichi,Fujii Takuro,Takeda Koji,Nishi Hidetaka,Kakitsuka Takaaki,Fukuda Hiroshi,Tsuchizawa Tai,Matsuo Shinji

Publisher

The Electrochemical Society

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient optical phase modulator based on an III–V metal-oxide-semiconductor structure with a doped graphene transparent electrode;Japanese Journal of Applied Physics;2022-12-23

2. Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon;Nanomaterials;2022-08-05

3. Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001);Crystals;2022-03-26

4. Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001);Coatings;2019-12-04

5. Surface energy engineering for LiTaO3and α-quartz SiO2for low temperature (<220 °C) wafer bonding;Journal of Vacuum Science & Technology A;2019-07

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