Implantation and Annealing Studies of Laterally Seeded Recrystallized Silicon on Silicon Dioxide-Reference-Cited by-同舟云学术

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Implantation and Annealing Studies of Laterally Seeded Recrystallized Silicon on Silicon Dioxide

Published:1984-06-01 Issue:6 Volume:131 Page:1409-1416
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Banerjee S. K.¹²³,Tong R. Y.¹²³,Lee B.¹²³,DeJule R. Y.¹²³,Streetman B. G.¹²³,Lam H. W.¹²³

Affiliation:

1. Coordinated Science Laboratory, and Department of Electrical Engineering, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801

2. Department of Electrical Engineering, University of Texas at Austin, Austin, Texas 78712

3. Texas Instruments, Incorporated, Central Research Laboratories, Dallas, Texas 75265

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2115860/pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Thin Films by Chemical Vapour Deposition;1990

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