Amorphous Carbon Film Deposition for Hydrogen Barrier in FeRAM Integration by Radio Frequency Plasma Chemical Vapor Deposition Method
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Published:2009-09-25
Issue:8
Volume:25
Page:693-698
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Saito Takeyasu,Izumi Kaname,Hirota Yuichiro,Okamoro Naoki,Kondo Kazuo,Yoshimura Takeshi,Fujimura Norifumi
Abstract
Amorphous carbon (α-C) films were deposited on PbLaZrTiOx (PLZT) capacitors by a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. The α-C films of 20nm prepared with different deposition pressure, methane concentration and RF power were investigated as a hydrogen barrier layer for ferroelectric random access memory (FeRAM) integration. The α- C films contained atomic hydrogen as shown by Fourier transform infrared spectrometry (FT-IR) and exhibited a possibility to suppress the hydrogen degradation of ferroelectric properties.
Publisher
The Electrochemical Society