Dye-Sensitized Hole Injection at p-type III-V Electrode Interfaces

Abstract

Single crystalline, non-degenerately doped p-type gallium phosphide (GaP) electrodes were examined for the purpose of constructing aqueous-based dye-sensitized systems featuring light-stimulated hole injection. Features including the relevant semiconductor-sensitizer energetics, surface conditioning, and redox mediator are examined to define system aspects that most strongly affect internal quantum yields for charge injection. The present findings indicate that the preparation of GaP electrode interfaces strongly influences charge injection yields.