Etch Characteristics of Succinic Acid/Ammonia/Hydrogen Peroxide versus Aluminum Mole Fraction in AlGaAs-Reference-Cited by-同舟云学术

Etch Characteristics of Succinic Acid/Ammonia/Hydrogen Peroxide versus Aluminum Mole Fraction in AlGaAs

Published:1993-09-01 Issue:9 Volume:140 Page:L138-L139
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Merritt Scott A.¹,Dagenais Mario¹

Affiliation:

1. Phottonic Switching and Integrated Optoelectronics Laboratory, Department of Electrical Engineering, University of Maryland, and Joint Program for Advanced Electronic Materials, College Park, Maryland 20742

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2220895/pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Linearity enhancement and noise reduction in a passivated AlGaAs/InGaAs/GaAs high-electron mobility transistor;Journal of the Korean Physical Society;2021-09-28

2. Self-aligned nanoislands nanobeam bandedge lasers;Optics Express;2017-03-10

3. Batteries used to power implantable biomedical devices;Electrochimica Acta;2012-12

4. Metal electrode influence on the wet selective etching of GaAs/AlGaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-07

5. Sacrificial etching of AlxGa1-xAs for III–V MEMS surface micromachining;Applied Physics A;2007-05-24