La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing

Abstract

Leakage current characteristics of high temperature annealed La2O3 film with Sc2O3 buffer layer was reported. Large amount of leakage current suppression was obtained by inserting Sc2O3 when annealed at high temperature ,without degrading the Equivalent Oxide Thickness (EOT). La2O3/Sc2O3 gate stack would be one of the solution for La2O3-based gate insulator for high temperature annealing.