Formation of Graded SiGe on Insulator by Segregation-Controlled Rapid-Melting-Growth
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Published:2013-03-15
Issue:9
Volume:50
Page:747-751
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Matsumura Ryo,Tojo Yuki,Yokoyama Hiroyuki,Kurosawa Masashi,Sadoh Taizoh,Miyao Masanobu
Abstract
Formation of laterally-graded single-crystal SiGe-on-insulator structures by rapid-melting-growth of a-SiGe is investigated. From micro-probe Raman scattering spectroscopy measurements, it is revealed that the Si concentration profiles in grown SiGe layers are significantly affected by the growth conditions and sample sizes. Based on the systematical analysis of the phenomena, effects of the growth rate on Si segregation kinetics in rapid-melting growth are clarified. These findings are expected to be useful to obtain epitaxial templates with laterally-variable lattice constants for 2-dimensional integration of various functional devices on an Si-platform.
Publisher
The Electrochemical Society