Characterization of p‐Type Cadmium Telluride Obtained by Electrochemical Deposition-Reference-Cited by-同舟云学术

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Characterization of p‐Type Cadmium Telluride Obtained by Electrochemical Deposition

Published:1986-12-01 Issue:12 Volume:133 Page:2580-2585
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Llabŕs Juan¹,Delmas Vicente¹

Affiliation:

1. Solid State Physics Institute, CSIC‐UAM, Cantoblanco, 28049 Madrid, Spain

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2108475/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterisation of CdS∣CdTe heterojunctions by photocurrent spectroscopy and electrolyte electroreflectance/absorbance spectroscopy (EEA/EER);Journal of Electroanalytical Chemistry;2002-09

2. Thin-film CdTe for imaging detector applications;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-02

3. Electrochemically prepared thin-film solar cells;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

4. Control of the electrodeposition of cadmium telluride: effect of the quasi-rest potential;Journal of Materials Chemistry;1995

5. Dependence of the composition of CdTe semiconductor on conditions of electrodeposition;Journal of Electroanalytical Chemistry;1994-02

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