Resistivity of LPCVD Polycrystalline‐Silicon Films-Reference-Cited by-同舟云学术

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Resistivity of LPCVD Polycrystalline‐Silicon Films

Published:1979-05-01 Issue:5 Volume:126 Page:833-837
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kamins T. I.¹

Affiliation:

1. Hewlett‐Packard Laboratories, Palo Alto, California 94304

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2129151/pdf

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p+ polycrystalline silicon gate used in CMOS technologies;Thin Solid Films;2010-02

2. Chemical Vapor Deposition;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

3. Analysis and modeling of low pressure chemical vapor deposition of phosphorus-doped polysilicon in commercial scale reactor;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07

4. Silicon, Polycrystalline;digital Encyclopedia of Applied Physics;2003-04-15

5. Polysilicon Substrates;Encyclopedia of Materials: Science and Technology;2001

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