Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2-Reference-Cited by-同舟云学术

Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Published:2011 Issue:4 Volume:158 Page:H417
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Gee Kim Wan,Gyu Sung Min,Joo Kim Sook,Hee Yoo Jong,One Youn Te,Won Oh Jang,Nam Kim Jung,Gu Gyun Byung,Wan Kim Taeh,Ho Kim Chi,Young Byun Jun,Kim Won,Sig Joo Moon,Sung Roh Jae,Ki Park Sung

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition

2. Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices

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