Temperature-Dependent Investigation of AlGaN/GaN Oxide-Passivated HEMT by Using Hydrogen Peroxide Oxidation Method
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
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1. Effect of pH and structure on the channel conductivity of AlGaN/GaN heterostructure based sensors;Sensors and Actuators B: Chemical;2018-09
2. Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode;Sensors and Actuators B: Chemical;2017-07
3. Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches;Sensors and Actuators B: Chemical;2015-06
4. Comparison of the Stability of Functionalized GaN and GaP;ChemPhysChem;2015-03-24
5. Investigation of Temperature-Dependent Characteristics of AlGaN/GaN MOS-HEMT by Using Hydrogen Peroxide Oxidation Technique;IEEE Transactions on Electron Devices;2014-08
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