Growth of SiC Films on Si(100) by Electron Cyclotron Resonance Chemical Vapor Deposition Using SiH4 / CH 4 / H 2-Reference-Cited by-同舟云学术

Growth of SiC Films on Si(100) by Electron Cyclotron Resonance Chemical Vapor Deposition Using SiH4 / CH 4 / H 2

Published:1995-12-01 Issue:12 Volume:142 Page:4279-4284
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Liu Chih‐Chien¹²³,Lee Chiapyng¹²³,Cheng Kuan‐Lun¹²³,Cheng Huang‐Chung¹²³,Yew Tri‐Rung¹²³

Affiliation:

1. Department of Chemical Engineering, National Taiwan Institute of Technology, Taipei, Taiwan

2. Department of Electronics Engineering, National Chiao‐Tung University, Hsinchu, Taiwan

3. Materials Science Center, National Tsing‐Hua University, Hsinchu, Taiwan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2048497/pdf

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1. ChemInform Abstract: Growth of SiC Films on Si(100) by Electron Cyclotron Resonance Chemical Vapor Deposition Using SiH4/CH4/H2.;ChemInform;2010-08-12

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