Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO2-Based Thin Film Transistors-Reference-Cited by-同舟云学术

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Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO2-Based Thin Film Transistors

Published:2017 Issue:7 Volume:6 Page:P379-P382
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Choi Hyunwoo,Shin Jaemin,Shin Changhwan

Funder

National Research Foundation of Korea (NRF)

Ministry of Trade, Industry and Energy, Korea | Korea Evaluation Institute of Industrial Technology (KEIT)

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. Polysilicon Thin Film-Transistors With Uniform and Reliable Performance Using Solution-Based Metal-Induced Crystallization

3. Threshold Voltage Uniformity Enhancement for Low-Temperature Polysilicon Thin-Film Transistors Using Tilt Alignment Technique

4. Facchetti A. Marks T. J. , Transparent Electronics: From Synthesis to Applications, p. 54, Wiley, Chichester, West Sussex (2010).

5. Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs

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