Author:
Cho Hyunchol,Park K W,Ahn J H,Park C H,Cho H J,Yeom S J,Hong K,Kwak N J
Abstract
Thin ZrO2/Ta2O5 multi-laminate layer of ~10 nm was grown by atomic layer deposition (ALD) method and it was discussed about the metallic Ta reduction at the interface between ZrO2 and Ta2O5. Metallic Ta 4f7/2 peak was observed inside of the layer from the result of XPS analysis and it is thought that strong metallic Ta reduction was happened between Ta2O5 and as-coming Zr source (or ZrO2). Also, these results were supported by the Gibbs free energy calculations.
Publisher
The Electrochemical Society
Cited by
3 articles.
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