Effects of Microwave Power on Thermal Annealing Behaviors of Hydrogenated Amorphous Silicon
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Published:2011-03-21
Issue:17
Volume:33
Page:65-69
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Wu Ping-Jung,Chen I-Chen,Lee Chien-Chieh,Chang Jenq-Yang,Li Tomi T.,Su Chiung-Chieh
Abstract
In this study, we have investigated the recrystallization behaviors of hydrogenated amorphous silicon (a-Si:H) films by post-growth thermal annealing as a function of microwave power using electron cyclotron resonance chemical vapor deposition (ECRCVD). The crytallinity of annealed a-Si:H films depends on the porosity of the as-deposited thin films. We suggested that the film with high porosity has lowest crystallinity due to strong oxygen diffusion and formation of SiOx inside the film.
Publisher
The Electrochemical Society