The Stability and Reliability of Mixed Oxide-Based Thin Film Transistors under Gamma Irradiation
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Published:2013-03-15
Issue:8
Volume:50
Page:191-196
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Alford Terry L,Indluru Anil,Vemuri Rajitha N. P.,Holbert Keith E.
Abstract
This research reports the performance of low temperature fabricated indium zinc oxide (IZO) TFTs under the influence of gamma radiation. Irradiation with a dose of 1.7 Mrads resulted in a negative threshold voltage shift and degradation in the subthreshold swing. The electron mobility however increased on gamma exposure from 2.8 to 8.8 cm2/V-s. The variation in the density of interface states created and electron-hole pairs generated attribute to the change in electrical properties. Moreover, the reliable electrical behavior of IZO TFTs over a-Si:H TFTs under gamma radiation makes them a promising alternative for future applications that require radiation hard TFTs.
Publisher
The Electrochemical Society