Fabrication Mechanism of Atomically Flat n-Type 4H-SiC (000-1) Surfaces by Electrochemical Method
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference21 articles.
1. SiC MEMS: opportunities and challenges for applications in harsh environments
2. Silicon carbide as a new MEMS technology
3. Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing
4. Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs
5. Mechanochemical Polishing of Silicon Carbide Single Crystal with Chromium(III) Oxide Abrasive
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2. Electrochemical etching modes of 4H-SiC in KOH solutions;Semiconductor Science and Technology;2023-04-13
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4. Effect of pulsed UV laser irradiation on 4H-SiC MOS with thermal gate oxide;Journal of Materials Science: Materials in Electronics;2020-01-01
5. Ultraviolet-excitation Polishing using Photocatalyst and Cathilon;Journal of the Japan Society for Precision Engineering;2019-05-05
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