Performance Optimization of Conventional CNTFETs Based on Asymmetric Lightly Doped Source and Drain Regions-Reference-Cited by-同舟云学术

Performance Optimization of Conventional CNTFETs Based on Asymmetric Lightly Doped Source and Drain Regions

Published:2016 Issue:5 Volume:5 Page:M23-M26
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Raeini Amin Ghasemi Nejad,Abdali Mehran

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Agrawal Kajari R. Kottilingel Shilpa M. Sonkusare Reena Rathod S. S. , “Performance characteristics of a Single Walled Carbon Nanotube Field Effect Transistor (SWCNT-FET)”, IEEE, pp. 30–35, (2014).

2. ghasemi N. R. Amin Kordrostami Zoheir Javaheri Mojtaba , “High On/Off Current Ratio in SB-CNTFET Based on Tuning the Gate Insulator Parameters for Different Ambient Temperatures”, IEEE NEMS 2015.

3. Sinha Sanjeet Kumar Chaudhury Saurabh , “Impact of Temperature Variation on CNTFET Device Characteristics”, IEEE, (2013).

4. Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping

5. Transport study of gate and channel engineering on the surrounding-gate CNTFETs based on NEGF quantum theory

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3. Design and Optimization of Lightly Doped CNTFET Architectures Based on NEGF Method and PSO Algorithm;ECS Journal of Solid State Science and Technology;2019

4. Modified Schottky Barrier CNTFET with lightly doped drain;Micro & Nano Letters;2018-04

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