A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon-Reference-Cited by-同舟云学术

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Published:1998-05-01 Issue:5 Volume:145 Page:1668-1671
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Zheng D. W.¹,Cui Q.²,Huang Y. P.¹²³,Zhang X. J.²,Kwor R.³,Li A. Z.¹,Tang T. A.¹

Affiliation:

1. Department of Electronic Engineering, Fudan University, Shanghai 200433, China

2. Surface Physics Laboratory, Fudan University, Shanghai 200433, China

3. Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, Colorado 80933‐7150

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838535/pdf

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