Process Optimization and Integration for Silicon Oxide Intermetal Dielectric Planarized by Chemical Mechanical Polish
Author:
Affiliation:
1. Institute of Materials Science and Engineering, National Chiao‐Tung University, Hsin Chu 300, Taiwan
2. Department of Materials Science and Engineering, National Cheng‐Kung University, Tainan 701, Taiwan
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/1.1391877/pdf
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3. An integrated material removal model for silicon dioxide layers in chemical mechanical polishing processes;Wear;2009-03
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