Effects of N Doping in Ru-Ta on Barrier Property and Reliability Performance for Cu Interconnects-Reference-Cited by-同舟云学术

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Effects of N Doping in Ru-Ta on Barrier Property and Reliability Performance for Cu Interconnects

Published:2016 Issue:7 Volume:5 Page:P433-P437
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Torazawa Naoki,Hinomura Tooru,Hirao Shuji,Kobori Etsuyoshi,Korogi Hayato,Matsumoto Susumu

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Kim H. Shimogaki Y. , Proc. of Advanced Metallization Conference 2004, p. 551 (2004).

2. PEALD of a Ruthenium Adhesion Layer for Copper Interconnects

3. Characteristics of Ruthenium Films Prepared by Chemical Vapor Deposition Using Bis(ethylcyclopentadienyl)ruthenium Precursor

4. Diffusion Studies of Copper on Ruthenium Thin Film

5. Cu Wettability and Diffusion Barrier Property of Ru Thin Film for Cu Metallization

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen Plasma-Assisted Atomic Layer Deposition of Ru with Low Oxygen Content;Korean Journal of Chemical Engineering;2024-02-21

2. Hydrogen Plasma-Assisted Atomic Layer Deposition of Ru with Low Oxygen Content;2023-08-18

3. Seedless Cu Electroplating on Ru-W Thin Films for Metallisation of Advanced Interconnects;International Journal of Molecular Sciences;2022-02-08

4. XPS Diffusion analysis of Ta(N)/Ru Diffusion Barriers for Cobalt Interconnects;2021 IEEE International Interconnect Technology Conference (IITC);2021-07-06

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