Author:
Maikap S.,Das Atanu,Wang T.-Y.,Tien T.-C.,Chang L.-B.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. T. Sugizaki, M. Kobayashi, M. Ishidao, H. Minakata, M. Yamaguchi, Y. Tamura, Y. Sugiyama, T. Nakanishi, and H. Tanaka , presented at the Symposium on VLSI Technology 2003,Digest of Technical Papers, p. 27 (2003).
2. Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications
3. Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
4. PolySi-SiO[sub 2]-ZrO[sub 2]-SiO[sub 2]-Si Flash Memory Incorporating a Sol-Gel-Derived ZrO[sub 2] Charge Trapping Layer
5. A novel high-/spl kappa/ SONOS memory using TaN/Al/sub 2/O/sub 3//Ta/sub 2/O/sub 5//HfO/sub 2//Si structure for fast speed and long retention operation
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27 articles.
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