Effects of Precursor Flow Rates on Characteristics of Low-K SiOC(H) Film Deposited by Plasma-Enhanced Chemical Vapor Deposition
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Published:2016-05-19
Issue:2
Volume:72
Page:253-268
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ISSN:1938-6737
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Container-title:ECS Transactions
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language:en
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Short-container-title:ECS Transactions
Author:
Cheng Y.-L.,Huang C.-W.,Sun C.-R.,Lee W.-H.
Publisher
The Electrochemical Society