Numerical Investigation on Atomic Migration Effect on Thermal Conductivity of Al/Cu Interface Structures in Electronic Interconnection Packaging

Abstract

The thermal conductivity of Al/Cu interface structures in electronic interconnection packaging is studied based on NEMD method by considering the atomic migration under different temperatures in this work. An interesting phenomenon is discovered that the thermal conductivity of Al/Cu interface increases with the increasing of atomic migration and diffusion from 400K to 600K; However, it decreases when the temperature is over 600K. It may be caused by the recrystallization of aluminum atoms, which lead to the interface thermal resistance increasing. It means that the heat transfer efficiency can be artificially controlled by heat treatment in appropriate temperature range. This investigation is helpful for understanding the interface heat transfer mechanism of the interface structures, which also implies a potential method for the analysis of the interface thermal performance and design of the interface in electronic packaging micro/nano-manufacturing.