Frequency‐Resolved Admittance Measurements on InAlAs / InGaAs / InAlAs Single‐Quantum Wells to Determine the Conduction Band Offset and the Capture Coefficient-Reference-Cited by-同舟云学术

Frequency‐Resolved Admittance Measurements on InAlAs / InGaAs / InAlAs Single‐Quantum Wells to Determine the Conduction Band Offset and the Capture Coefficient

Published:1993-05-01 Issue:5 Volume:140 Page:1492-1495
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

López‐Villegas J. M.¹²³,Roura P.¹²³,Bosch J.¹²³,Morante J. R.¹²³,Georgakilas A.¹²³,Zekentes K.¹²³

Affiliation:

1. Laboratori de Caracterització de Materials per la Microelectrònica (LCMM), Departament de Física Aplicada i Electrònica, Universitat de Barcelona, E‐08028 Barcelona, Spain

2. University of Maryland, CALCE Electronics Packaging Research Center, College Park, Maryland 20742

3. Foundation for Research and Technology‐Hellas (FORTH), Heraklion 711 10, Crete, Greece

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2221585/pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis;Solar Energy Materials and Solar Cells;2017-01

2. Nondestructive diagnostics of nanoheterostructures with InGaN/GaN multiple quantum wells by thermal admittance spectroscopy;Inorganic Materials;2011-11-20

3. Analytical expression for the quantum dot contribution to the quasistatic capacitance for conduction band characterization;Journal of Applied Physics;2008-07-15

4. Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001);Materials Science and Engineering: C;2006-03

5. Capacitance-voltage characteristics of InAs dots: a simple model;Brazilian Journal of Physics;2002-09