Photoluminescence Study of Phosphorus‐Doped LPCVD Silicon Epilayers Deposited from Dichlorosilane-Reference-Cited by-同舟云学术

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Photoluminescence Study of Phosphorus‐Doped LPCVD Silicon Epilayers Deposited from Dichlorosilane

Published:1991-09-01 Issue:9 Volume:138 Page:2839-2844
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Canham L. T.¹²³,Higgs V.¹²³,Goulding M. R.¹²³

Affiliation:

1. Royal Signals and Radar Establishment, Malvern, Worcestershire, WR14 3PS, England

2. Department of Physics, Kings College London, London, WC2R 2LS, England

3. Allen Clark Research Centre, Plessey Research (Caswell) Limited, Caswell, Towcester, Northants, NN12 8EQ, England

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086068/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Functionalization of oxide-free silicon surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09

2. Electroluminescence of Heavily Doped p‐Type Porous Silicon under Electrochemical Oxidation in Galvanostatic Regime;Journal of The Electrochemical Society;1996-03-01

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