(Invited) Modeling and Simulation of Silicon Carbide Power Systems

Abstract

Silicon Carbide (SiC) based electronics are extremely promising for use in power systems as a result of their large band-gap and ability to grow a gate oxide. To facilitate the development of SiC based circuits, we need to develop new design tools that help to extract the physics of the devices, as well as to quantify the electrical and thermal performances for improved design. This paper discusses various modeling methods, from the atomic level to the circuit level, to help understand and quantify both the electrical and thermal characteristics of new circuits using SiC devices.