Author:
Bakowski Mietek,Lim Jang-Kwon,Kaplan Wlodek,Schöner Adolf
Abstract
Some chosen examples of the use of buried grid technology for advanced SiC devices are discussed. First example is development of normally-off and normally-on JFETs. Second is the development of Schottky diodes for high temperature operation. Other examples are efficient junction termination and avalanche UV detector. Experimental results are used in support of simulations.
Publisher
The Electrochemical Society
Cited by
7 articles.
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