Author:
MacKenzie M.,Craven A. J.,McComb D. W.,Gendt S. De,Docherty F. T.,McGilvery C. M.,McFadzean S.
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering
Reference9 articles.
1. Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology
2. C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, S. B. White, and P. Tobin ,
VLSI Technology Digest
, p. 9 (2003).
3. Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics
4. Interfacial reactions in a HfO2∕TiN/poly-Si gate stack
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