Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy-Reference-Cited by-同舟云学术

Characterization of Pinhole in Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Transmission Microscopy

Published:2008 Issue:11 Volume:155 Page:H864
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Wu Xing,Uchikoshi Junichi,Hirokane Takaaki,Yamada Ryuta,Takeuchi Akihiro,Arima Kenta,Morita Mizuho

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

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2. Surface defects on SOI wafers and their influence on device characteristics

3. Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope

4. K. Bernstein and N. J. Rohrer ,SOI Circuit Design Concepts, Kluwer, Dordrecht (2000).

5. Patterned silicon-on-insulator technology for RF Power LDMOSFET

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