XPS Analysis of Porous Silicon

Abstract

This manuscript presents an original XPS study of mesoporous p-type silicon samples. The use of X-ray photoelectron spectroscopy helps in understanding the different chemical environments of silicon atoms generated during porous-silicon formation and their evolution in time. Thus, the oxidation state and the contamination can be precisely known and controlled. The loss of the flatness of the surface is followed by the modification of the plasmon peaks and the morphology obtained is monitored by SEM.