Author:
Yeo Yee-Chia,Han Genquan,Yang Yue,Guo Pengfei
Abstract
We examine technologies aimed at performance enhancement for silicon- or germanium based TFETs, including strain engineering, source/drain junction profile engineering, and use of heterojunction materials. Device and circuit simulation results will also be discussed.
Publisher
The Electrochemical Society
Cited by
12 articles.
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