Abstract
In this paper we will review recent results on heterogeneous integration of novel electronic and optoelectronic Ge grown heteroepitaxial on Si. In the past work Ge has shown much promise for high performance MOSFETs and optical detectors. In this work we will discuss several other novel devices: tunnel FET (TFET), capacitorless quantum well single transistor DRAM (1T-QW DRAM), optical modulators and light emitters for on- and off-chip optical interconnects.
Publisher
The Electrochemical Society
Cited by
1 articles.
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