Author:
Chen Guoxing,Huo Zongliang,Zhao Shengjie,Yang Xiaonan,Liu Ziyu,Zhang Manhong,Sun Zhong,Han Yulong,Zhang Dong,Wang Chenjie,Chu Yuqiong,Liu Su,Liu Ming
Abstract
ALD process of HfO2 trapping layer with TEMAH and H2O as precursors is systematically investigated . By adjusting ALD process parameters of deposition temperature, purge gas cycle mode and purge time, HfO2 film quality is effectively improved for charge trapping memories(CTM) application. It is found that a large memory window of 4.4V can be obtained for devices with parameters of 150℃ deposition temperature, one TEMAH-one water cycle mode and 5s purge time. Enhancement of memory performance is attributed to the part transformation of chemisorption into physisorption when depositing the trapping layer. For further confirmation of the conclusion, both MHOS and MAHOS structures are employed. The findings provide a guide for future design of CTM.
Publisher
The Electrochemical Society
Cited by
1 articles.
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