Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology-Reference-Cited by-同舟云学术

Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Published:2009 Issue:11 Volume:156 Page:G173
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Yota Jiro

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference31 articles.

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5. D. Barone, J. Yota, H. Ly, S. Mui, S. Tiku, and S. Canale , 2008 CS MANTECH Tech. Digest, p. 57 (2008).

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