The Role of Vacancies and Oxygen for Setting up an Efficient Getter for Cu and Ni in Silicon Wafers

Abstract

In this work, we present results of investigations on Cu and Ni gettering efficiency for Czochralski silicon wafers containing various concentrations of oxygen and vacancies. In order to achieve suitable gettering sites for these impurities, the samples were subjected to a thermal treatment at temperatures in range between 700 {degree sign}C and 1000 {degree sign}C for different times in range between 0.5 h and 8 h. The gettering efficiency of Cu and Ni was determined by haze tests. Threshold values for efficient gettering of Cu and Ni were obtained.