Author:
Liu Joe,Yao Eric,Fan Erics,Chang Kent,Lv Ted,Zhang Jeff,Liang Lee,Hong Jerry,Li Mars
Abstract
To improve the 0.11μm DRAM capacity of foundry and save cost, with series of tests, we successfully transferred 0.11μm DRAM M0 (Bit Line) layer lithography process from the ArF(NA=0.7) process to high NA (0.8) KrF process.
Publisher
The Electrochemical Society