Temperature Effect on Memory Functions of the nc-CdSe Embedded ZrHfO High-k MOS Device

Abstract

The temperature effect on the memory characteristics of the MOS capacitor containing the nanocrystalline CdSe embedded ZrHfO high-k gate dielectric has been investigated. At the high temperature, the Coulomb blockade phenomenon is suppressed and the leakage current is increased due to the relative high conductivity of the dielectric film. At the same time, the density of interface states is high and the memory window is small. When the temperature is increased, the hole trapping capacity is enhanced because of the improve the supply of holes from the Si. However, the electron trapping capacity is reduced because of the easy transfer of electrons through the high-k stack. The frequency dispersion phenomenon is enhanced at the high temperature. The temperature has strong influence on the carrier generation, transport, and trapping at the interface and the bulk film.