Optimization of Electron Cyclotron Resonance Reactive Ion Beam Etching Reactors for Dry Etching of GaAs with Cl2-Reference-Cited by-同舟云学术

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Optimization of Electron Cyclotron Resonance Reactive Ion Beam Etching Reactors for Dry Etching of GaAs with Cl2

Published:1997-09-01 Issue:9 Volume:144 Page:3191-3197
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Nishioka K.¹,Sugiyama M.¹,Nezuka M.²,Shimogaki Y¹,Nakano Y.³,Tada K.³,Komiyama H.¹

Affiliation:

1. Department of Chemical System Engineering, School of Engineering, University of Tokyo, Bunkyo‐ku, Tokyo 113, Japan

2. Plasma System Corporation, 922 Yaho, Kunitachi‐shi, Tokyo 186, Japan

3. Department of Electronic Engineering, School of Engineering, University of Tokyo, Bunkyo‐ku, Tokyo 113, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837982/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel fast and flexible technique of radical kinetic behaviour investigation based on pallet for plasma evaluation structure and numerical analysis;Journal of Physics D: Applied Physics;2013-06-11

2. Fabrication and demonstration of square lattice two-dimensional rod-type photonic bandgap crystal optical intersections;Photonics and Nanostructures - Fundamentals and Applications;2006-05

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